Name: SIHLL110TR-GE3
Brand: Vishay Siliconix
SKU: 742-SIHLL110TR-GE3TR-ND
Price: 990 KRW
Availability: OutOfStock

SIHLL110TR-GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Vishay Siliconix

In Stock: 0

Unit Price: ₩1,301.00000

Parametric Equivalent

Vishay Siliconix

In Stock: 0

Unit Price: ₩1,315.00000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHLL110TR-GE3
DigiKey Part Number	742-SIHLL110TR-GE3TR-ND - Tape & Reel (TR) 742-SIHLL110TR-GE3CT-ND - Cut Tape (CT) 742-SIHLL110TR-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHLL110TR-GE3
Description	MOSFET N-CH 100V 1.5A SOT223
Manufacturer Standard Lead Time	15 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Max) @ Id, Vgs	540mOhm @ 900mA, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
Base Product Number	SIHLL110