Name: IRFBE30SPBF
Brand: Vishay Siliconix
SKU: IRFBE30SPBF-ND
Price: 5912 KRW
Availability: OutOfStock

IRFBE30SPBF is out of stock and can be placed on backorder.

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFBE30SPBF
DigiKey Part Number	IRFBE30SPBF-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	IRFBE30SPBF
Description	MOSFET N-CH 800V 4.1A D2PAK
Manufacturer Standard Lead Time	15 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 4.1A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet
EDA/CAD Models	IRFBE30SPBF Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	IRFBE30

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