Name: IPP60R199CPXKSA1
Brand: Infineon Technologies
SKU: 448-IPP60R199CPXKSA1-ND
Price: 5516 KRW
Availability: OutOfStock

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IPP60R199CPXKSA1
DigiKey Part Number	448-IPP60R199CPXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP60R199CPXKSA1
Description	MOSFET N-CH 650V 16A TO220-3
Customer Reference
Detailed Description	N-Channel 650 V 16A (Tc) 139W (Tc) Through Hole PG-TO220-3
Datasheet	Datasheet
EDA/CAD Models	IPP60R199CPXKSA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1520 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	IPP60R199

IPP60R199CPXKSA1